Lattice deformation in laser-irradiated silicon crystal studied by picosecond X-ray diffraction

Kishimura H; Yazaki A; Hironaka Y; Nakamura KG; Kondo K

Applied Surface Science, Vol.207, No.1-4, 314-317, 2003

DOI10.1016/S0169-4332(02)01509-X Export Citation

Lattice deformation in laser-irradiated silicon crystal studied by picosecond X-ray diffraction

Kishimura H, Yazaki A, Hironaka Y, Nakamura KG, Kondo K

Lattice deformation in laser-irradiated Si(1 1 1) has been studied by picosecond X-ray diffraction at a delay time of 350 ps. The rapid thermal expansion (0.24% at maximum) was observed at 2.0 GW/cm(2) irradiation. By irradiation above dielectric breakdown threshold (10.0 GW/cm(2)), the intense lattice compression (2.1% at maximum) was observed. The compression is caused by the laser ablation due to dielectric breakdown. (C) 2003 Elsevier Science B.V. All rights reserved.

Keywords:time-resolved X-ray diffraction;silicon;laser ablation;picosecond