Thin films of titanium dioxide have been deposited on strained Si0.82Ge0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C3H7)(4)] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D-it), fixed oxide charge density (Q(f)/q) and flat-band voltage (V-FB) of as-deposited films were found to be 13.2, 40.6 Angstrom, 6 x 10(11) eV(-1) cm(-2), 3.1 x 10(11) cm(-2) and -1.4 V, respectively. The capacitance-voltage (C-V), current-voltage (I-V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications. (C) 2003 Elsevier Science B.V. All rights reserved.