Using reflection electron microscopy (REM) we study step fluctuations of Si(1 1 1) at 1100 degreesC. Sublimation is compensated by flux from a nearby crystal. The fluctuation behavior is qualitatively like that at 900 degreesC (where evaporation is negligible), with unexplained quantitative differences. Regarding the three parameters of the step continuum model of vicinal surfaces, the step stiffness is about half that at 900 degreesC, in agreement with theory. Step repulsions are at least six times as strong as predicted from 900 degreesC, suggesting non-equilibrium effects probably due to electromigration from the heating current. Temporal correlations have a large initial offset (due to slow scanning relative to fluctuations) but show scaling behavior. (C) 2003 Elsevier Science B.V. All rights reserved.