Electronic properties of the surface as well as the interface of silicon-on-insulator (SOI) materials have been characterized by the Kelvin method combined with surface photovoltage (SPV) measurements. In order to separate the interface properties from the surface ones, we used the data for the bulk Si surface, which was treated in the same manner, i.e. dipping in a diluted HE solution, as for the SOI surface. From the temperature dependence of the SPV for the bulk Si, the values of the built-in potential, the surface state density and the surface recombination velocity were determined to be about 0.60 eV, 6 x 10(11) cm(-2) and 6 x 10(3) cm/s, respectively, for the HF-treated Si surface. By taking these values into account, we analyzed the SPV data for separation by implanted oxygen (SIMOX) wafer. The values of the interface state density and the interface recombination velocity at the buried-oxide/SIMOX interface were estimated to be about 3 x 10(12) cm(-2) and 3 x 10(4) cm/s, respectively. (C) 2003 Elsevier Science B.V. All rights reserved.