AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)(3))

Akane T; Jinno S; Yang Y; Kuno T; Hirata T; Isogai Y; Watanabe N; Fujiwara Y; Nakamura A; Takeda Y

Applied Surface Science, Vol.216, No.1-4, 537-541, 2003

DOI10.1016/S0169-4332(03)00495-1 Export Citation

AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)(3))

Akane T, Jinno S, Yang Y, Kuno T, Hirata T, Isogai Y, Watanabe N, Fujiwara Y, Nakamura A, Takeda Y

ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp)(3)). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP. (C) 2003 Elsevier Science B.V. All rights reserved.

Keywords:ErP;Er(EtCp)(3);InP;OMVPE;AFM