Epitaxial growth of cubic silicon carbide (3C-SiC) on Si(1 0 0) and (1 1 1) substrates was carried out under various radio frequency (rf) powers by triode plasma CVD using dimethylsilane (DMS) as a source gas. The dependences of the film properties such as crystallinity and the formation of stacking faults on the rf power were investigated. Under low substrate temperatures, the crystallinity and the ratio of the domain including stacking faults of SiC were improved at rf power of about 60W. On the other hand, those characteristics deteriorated by the application of the rf power at high temperature such as 1100 degreesC. The reason of such power dependences was discussed from the viewpoints of the impingement of charged particles and of the supply of hydrogen radicals. (C) 2003 Elsevier Science B.V All rights reserved.