The series resistance is an important parameter on the electrical characteristics of silicon Schottky barrier diodes. This parameter is influenced by the presence of the interface layer between the metal and the semiconductor and leads to non-ideal forward bias current-voltage (I-V). The aim of this work is to investigate the effect of series resistance on the non-ideal silicon Schottky diode (SSD) in our process fabrication. Two types of diodes: Al/n-Si and Au/n-Si, with high resistivity silicon bulk have been prepared. The parameter R-S, the ideality factor n and the barrier height phi(Bo) are determined by performing different plots from the forward I-V. (C) 2003 Elsevier Science B.V. All rights reserved.