SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mu m MOSFET fabrication

Shim J; Oh H; Choi H; Sakaguchi T; Kurino H; Koyanagi M

Applied Surface Science, Vol.224, No.1-4, 260-264, 2004

DOI10.1016/j.apsusc.2003.08.091 Export Citation

SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mu m MOSFET fabrication

Shim J, Oh H, Choi H, Sakaguchi T, Kurino H, Koyanagi M

The fully depleted (FD) silicon-on-insulator (SOI) MOSFETs with L-g of 0.1 mum were fabricated. For reducing contact resistance and source/drain parasitic series resistance, SiGe elevated source/drain structure and nickel germanosilicide contact layer on the SiGe has been introduced. For selective growth of SiGe and source/drain doping with implantation, novel process has been introduce. The contact resistivity, sheet resistance of nickel silicide and nickel germanosilicide of fabricated device is compared. (C) 2003 Elsevier B.V. All rights reserved.

Keywords:SiGe;elevated source/drain structure;nickel germanosilicide;step annealing;FD SOI MOSFET