Applied Surface Science, Vol.224, No.1-4, 288-291, 2004
Electrical propel-ties of ZrO2 films on Si1-x-yGexCy epitaxial layers
Deposition and electrical properties of high dielectric constant (high-k) ultrathin ZrO2 films on partially strain-compensated Si1-xGexCy/n-Si substrates are reported. Metal insulator semiconductor (MIS) structures were used for high frequency capacitance-voltage (C-V), current-voltage (I-V), and Fowler-Nordheim (F-N) constant current stressing studies. (C) 2003 Elsevier B.V. All rights reserved.