We present the state-of-the-art in simulation for industrial application of heterostructure devices based on the SiGe/Si material system. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of SiGe-heterojunction bipolar transistors (HBTs) with MINIMOS-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation. (C) 2003 Elsevier B.V. All rights reserved.