We present the state of the art of microwave performances of silicon heterostructures FETs (hetero-FETs). Recent advances are illustrated on using DaimlerChrysler (DC) technologies. f(MAX) as high as 188 and 135 GHz with minimum noise figure, NFmin as low as 0.3 and 0.5 dB at 2.5 GHz are reported, respectively, for n- and p-MODFET with gatelength from 100 to 130 nm. Experimental data and physical simulations of optimized structures show that fMAX of 70 nm gatelength n-MODFET could reach 360 GHz. (C) 2003 Elsevier B.V. All rights reserved.