Applied Surface Science, Vol.224, No.1-4, 390-393, 2004
Effect of temperature on the transfer characteristic of a 0.5 mu m-gate Si : SiGe depletion-mode n-MODFET
An investigation of the low-temperature operation of a 0.5 mum-gate Si:SiGe depletion-mode n-type modulation-doped field-effect transistor is presented. The investigated temperatures range from T = 300 to 180 K. The benefits of cryogenic operation are discussed. Experimental indications of parallel conduction in the device are presented, as well as their dependence on operating temperature. Measured data are compared with two-dimensional device simulations in MEDICI(TM) carried out using mobility values from Monte Carlo material calculations. (C) 2003 Elsevier B.V. All rights reserved.
Keywords:semiconductor compounds;heterostructures-electrical properties;metal-insulator-semiconductor structures (including semiconductor-to-insulator);field-effect devices;microelectronics;LSI;VLSI;ULSI;integrated circuit fabrication technology;low-temperature techniques