Undoped silicon (Si) films have been deposited on Si (1 0 0) substrates by pulsed magnetron sputtering in pure At atmosphere at substrate temperatures Ts between 300 and 450 degreesC. Rutherford backscattering channeling (RBS-C) experiments reveal high structural order indicative of epitaxial growth at Ts of 375-400 degreesC. The disorder depth profiles derived from RBS-C exhibit defective initial film growth which is markedly reduced in the film volume. Homoepitaxial silicon film growth is observed in this optimal temperature range up to a thickness of 1.6 mum and with growth rates of about 20 nm/min. At higher and lower substrate temperatures, the disorder in the films is considerably enhanced. (C) 2003 Elsevier B.V. All rights reserved.