Application of SIMS metrology in high volume wafer manufacturing allows comparison of important physical characteristics of devices and can address changes in the process during early stages of process flow, thus improving production yields and cycles. In the current paper, we investigate the correlation between wafer-level SIMS characterization and electrical characteristics of devices in a wide spectrum of front-and back-end applications: high precision SIMS analysis for implanter recipe development and monitoring is a technique that has provided major contributions to achieve electrically matched devices. SIMS analysis is also used widely on gate material selection and characterization. As SiGe/SiGeC is taking precedence over III-V materials for rf applications due to processing simplicity, SIMS analytical technique provides major metrology support on process targeting and development. The SIMS analytical technique has earned its reputation and is wide used as metrology solution on front-end semiconductor processing. Fluorine SIMS analysis investigation in TiN, W and its relation with increased via resistance and voids on the nucleation is an example of SIMS analysis application for back-end process support. (C) 2004 Elsevier B.V. All rights reserved.