Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

Nohira H; Shiraishi T; Takahashi K; Hattori T; Kashiwagi I; Ohshima C; Ohmi S; Iwai H; Joumori S; Nakajima K; Suzuki M; Kimura K

Applied Surface Science, Vol.234, No.1-4, 493-496, 2004

DOI10.1016/j.apsusc.2004.05.032 Export Citation

Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

Nohira H, Shiraishi T, Takahashi K, Hattori T, Kashiwagi I, Ohshima C, Ohmi S, Iwai H, Joumori S, Nakajima K, Suzuki M, Kimura K

The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.

Keywords:Rutherford back scattering;angle-resolved photoelectron spectroscopy;high-k dielectrics;depth profiling;electronic band structure;La2O3