The aim of this work is to experimentally investigate the effect of series resistance on the non-ideal silicon Schottky diode (SSD), in our process fabrication. Two types of diodes, with high resistivity silicon bulk, Al/n-Si and Al/p-Si have been prepared. The parameter R-S, the ideality factor n and the barrier height phi(B0) are determined by performing different plots from the experimental forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) measurement. The high resistivity Schottky diode is currently used in nuclear detection, we tested these junctions in alpha particle spectrometry and measured their energy resolution. (C) 2004 Elsevier B.V. All rights reserved.