화학공학소재연구정보센터
Applied Surface Science, Vol.237, No.1-4, 321-325, 2004
Etching of polycrystalline copper by oblique injection of argon ion
In order to miniaturize large scaled IC (LSI) and/or produce a multi-layered LSI device, copper wire with a smooth surface is required. For reduction of the surface roughness, ion etching with oblique injection was applied for polycrystalline copper. Argon ion irradiation was conducted by changing the incident angle and ion energy. After irradiation, many blisters of various sizes were observed. During normal ion injection, the etched amount of copper increased with ion energy and the average height of blisters also increased. Then, blister formation can be adjusted by ion energy. As the incident angle increased, the blister size became smaller and the surface became smooth compared with normal ion injection. This result suggests that preferential sputtering occurred for the protuberant parts of blisters. In particular, when the incident angle is 67.5degrees, the average height of blisters became half of the normal value. The present result shows that oblique ion irradiation contributes to the reduction of surface roughness. (C) 2004 Elsevier B.V. All rights reserved.