Characterization of a HfO2 (3 nm)/Si(001) interface prepared by atomic-layer chemical vapor deposition has been performed with high-resolution Rutherford backscattering spectroscopy (HRBS). Strain depth profile in the interface region has been measured with a combination of HRBS and channeling technique. It is found that a thin interface SiOx layer lies between the HfO2 film and the Si(001) substrate, and that compressive strain in the direction perpendicular to the surface is present in the Si(001) substrate near the SiOx/Si(001) interface. The observed maximum strain is about 1% at the interface and the strained region extends down to similar to3 nm from the interface. (C) 2004 Elsevier B.V. All rights reserved.