ZnSe films were prepared by a stacked elemental layer deposition method on glass substrates at a pressure 10(-5) Torr. The films were rapid thermal annealed (RTA) using halogen a lamp for different times to get a homogeneous structure of ZnSe thin films. The films were found to be p-type in nature. The band gap was found to vary with annealing time due to removal of defects and increase grain size of films. It was also observed by X-ray diffraction (XRD) pattern that the grain size of films increase with annealing time. The lattice constant for cubic structure of these films was found to be a = 5.72 Angstrom. Rutherford back scattering data also confirmed mixing of the elements with annealing time. Published by Elsevier B.V.