A simple template/catalyst-free chemical vapor growth process was developed for growing SiC nanowire directly on silicon wafers. The nanowires were identified as single crystalline P-phase SiC growing along <111> direction. The nanowires possess Si-C chemistry. The length and thickness of the nanowires are generally from several tens to over 100 mum and similar to80 nm, respectively. The process also demonstrated the possibility of in situ deposition of thin graphite coatings on the SiC nanowires. A contribution of present work to the applications of SiC nanowires, especially as reinforcement materials in ceramic nanocomposites, is expected. (C) 2004 Elsevier B.V. All rights reserved.