This investigation deals with the impact of pre-treatment and Ni thickness on the reactions of Ni-silicide/SiC contact fabrication. The specimens have been prepared by sputter depositing 3-100 nm Ni layer on 4H-SiC wafer followed by annealing at 800degreesC in vacuum for 20 min. The results by means of XPS show as follows: among the chemical cleaning procedures which have been tested, the recipe NH4OH:H2O2:H2O = 1:1:5, 85degreesC, 5 min; HF 10 %, 80degreesC, 2 min; boiling water 10 min is the most effective for SiC substrates. However, due to short time exposure in the air before experiment, certain contamination re-occurs. After annealing, the dominant silicide formed is Ni2Si, whereas C on the surface is graphite. Argon ion etching before the Ni deposition helps the formation of multi-layer structure. For the samples without pre-treatment or with chemical cleaning procedure, there is more C agglomerated at the surface and no multi-layer structure formed. Under the action of Ar ion etching, SiC decomposes more quickly and Ni diffuses faster. This effect together with limited C diffusivity in the formed silicide is a probable reason for the formation of the multi-layer structure. The silicides formed at the interface are dependent on the Ni layer thickness and substrate surface condition. (C) 2004 Elsevier B.V. All rights reserved.