Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

Shiozaki N; Anantathanasarn S; Sato T; Hashizume T; Hasegawa H

Applied Surface Science, Vol.244, No.1-4, 71-74, 2005

DOI10.1016/j.apsusc.2004.10.067 Export Citation

Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

Shiozaki N, Anantathanasarn S, Sato T, Hashizume T, Hasegawa H

Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of Wand d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties. (c) 2004 Elsevier B.V. All rights reserved.

Keywords:GaAs;AlGaAs;quantum wire;surface passivation;surface states;photoluminescence