Post-growth annealing of uniform InAs quantum dots (QDs) grown on GaAS(0 0 1) substrates was investigated, and obtained results gave some useful information about control of QD energy level and an intermixing effect between ln and Ga atoms. In particular, a wide control of photoluminescence (PL) peak energy (312 meV) and an extremely narrow PL linewidth (13 meV) were obtained from uniform QDs annealed at 700 degrees C. Photoluminescence properties of annealed QDs depending on anneal conditions were explained by modification of the QD structure and, an interdiffussion effect was discussed. (c) 2004 Elsevier B.V. All rights reserved.