The ion implantation is a well-known standard procedure in electronic device technology for precise and controlled introduction of dopants into silicon. Damages caused by implantation act as effective gettering zones, collecting unwanted metal impurities. In this work, the consequences of high-energy ion implantation into silicon and of subsequently annealing were analysed by means of secondary ion mass spectrometry (SIMS). The differences in impurities gettering behaviour were studied in dependence of the implantation dose and annealing time at T = 900 degrees C. (c) 2005 Elsevier B.V. All rights reserved.