In this paper, the SIMS beam induced roughness (BIR) in monocrystalline Si in presence of initial surface or bulk defects of nanometric size is studied. We follow the development of the BIR by monitoring the increase of Si2+ and SiO2+ signals during SIMS sputtering. The topography of the crater bottoms is measured at different steps of the evolution of the roughness using an atomic force microscope (AFM). We show that in presence of nanometric sized defects on the surface or in the bulk, the BIR develops far more rapidly than usual. It appears as soon as the crater reaches the defects and, as reported on Si free from any treatment, the same morphology evidencing waves perpendicular to the sputtering beam develops rapidly. This study of the behaviour of the BIR in presence of voluntarily introduced defects allows us to better understand the basic physical phenomena involved in its apparition. (c) 2006 Elsevier B.V. All rights reserved.