beta-SiC nanowires with an average diameter of 8-20 nm were synthesized using a simple thermal evaporation of SiO powders onto activated carbon fibers. Field emission was investigated based on the SiC nanowires deposited on a platinum film. A low turn-on field of 3.1-3.5 V mu m(-1) was measured at an anode-sample separation of 100-140 mu m. This type of SiC nanowires can be applied as field emitters in displays as well as vacuum electronic devices. (c) 2006 Elsevier B.V. All rights reserved.