HfO2 films prepared on glass substrates by dc reactive magnetron sputtering in an Ar + O-2 atmosphere are investigated. The films are polycrystallized with a pure monoclinic phase, and the crystallization strongly relates to the technology environment. Charged particle bombardment mainly caused by negative oxygen ions during sputtering on the films results in rougher surface morphology and worse crystalline property. Influence of sputtering pressure, substrate temperature and ArO2 flow ratio is studied. The main orientations of the films are (-111) and (111). The (-111) orientation is stable, but (111) orientation is very sensitive to the sputtering condition, and it can be suppressed effectively by introducing charged particle bombardment, lowing sputtering pressure and increasing oxygen concentration. (c) 2006 Elsevier B.V. All rights reserved.