Advanced Materials, Vol.12, No.1, 33-33, 2000
Frontier orbital model of semiconductor surface passivation: Dicarboxylic acids on n- and p-GaAs
Semiconductor surface states can affect the performance of many electronic devices, because of the significant role they have in electron transport across device interfaces. These authors use a series of dicarboxylic acids on GaAs surfaces to show that the effect is due to a HOMO-LUMO type of interaction between the frontier orbitals of the molecules and the semiconductor surface states.