The sensor performance of MISiC (metal-insulator-silicon carbide) diode devices depends on their temperature pretreatment: an activation step at 600 degreesC leads to fast-responding devices with extraordinarily high signals but the devices fail when operated above 700 degreesC. The authors focus on the key role of nanoparticles in high-temperature gas sensor applications of these MISiC devices, presenting a model in which the interface dipole moment of nanoparticles is seen as the driving force and explaining the difference in response of capacitor-configuration and Schottky-diode-configuration devices.