Advanced Materials, Vol.17, No.10, 1230-1230, 2005
A three-dimensional porous silicon p-n diode for betavoltaics and photovoltaics
Three-dimensional porous silicon p-n diodes made by standard industrial processing (see Figure) result in an energy-conversion layer with a large surface/volume ratio. This structure increases radioisotope energy-conversion efficiency tenfold, and could lead to a practical nuclear battery that lasts for many years. Experimental results also show marked photovoltaic response.