The simultaneous fabrication of both the active area and the channel of a thin-film transistor (TFT) is achieved by a reverse soft-molding process. This fabrication process leads to a well-ordered semiconductor film and to the formation of a channel whose length could be made, in principle, as small as desired for the top-contact device (see figure). The electrical characteristics of the device thus fabricated are equal to those obtainable with solution-processed polymer TFTs. (Scale bar is 2 mu m.)