In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors

Felici M; Polimeni A; Salviati G; Lazzarini L; Armani N; Masia F; Capizzi M; Martelli F; Lazzarino M; Bais G; Piccin M; Rubini S; Franciosi A

Advanced Materials, Vol.18, No.15, 1993-1993, 2006

DOI10.1002/adma.200600487 Export Citation

In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors

Felici M, Polimeni A, Salviati G, Lazzarini L, Armani N, Masia F, Capizzi M, Martelli F, Lazzarino M, Bais G, Piccin M, Rubini S, Franciosi A

In-plane bandgap, engineering of dilute nitrides by spatially delimited hydrogen irradiation (left, microphotoluminescence image of GaAsN) or displacement (right, cathodoluminescence image of hydrogenated GaAsN) is reported.