Advanced Materials, Vol.18, No.23, 3120-3120, 2006
High field-effect mobility in an organic thin-film transistor with a solid-state polymerized polydiacetylene film as an active layer
A highly ordered polydiacetylene thin film was prepared by vacuum deposition of 10,12-pentacosadiynoic acid, followed by photopolymerization of this layer under UV irradiation. Using an optimum substrate temperature of 50 degrees C during the monomer deposition, we obtained a high field-effect hole mobility of 0.8 cm(2) V-1 s(-1) with p-type field-effect transistor characteristics in the top source-drain electrode configuration.