Advanced Materials, Vol.19, No.3, 353-353, 2007
High ambipolar mobility in a highly ordered smectic phase of a dialkylphenylterthiophene derivative that can be applied to solution-processed organic field-effect transistors
A phenylterthiophene derivative that exhibits a highly ordered smectic phase around room temperature is synthesized. In the bulk of the smectic phase, ambipolar carrier transport is observed and electron mobility exceeds 0.2 cm(2) V-1 S-1. Thin-film transistors (see the AFM image in the figure) are fabricated by a spin-coating method and exhibit p-type operation, a field-effect mobility of 0.02 cm(2) v(-1) s(-1), and an on/off ratio of 10(6).