Electrochemical and Solid State Letters, Vol.3, No.1, 50-52, 2000
An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics
A device based on an asymmetric channel doping profile with the aim of reducing the inherent parasitic bipolar effects in fully depleted silicon-on-insulator (SOI) devices and improving the output characteristics is introduced. Measurements and two-dimensional simulations are used to study the device capabilities and limitations.