High current, common-base GaN/AlGaN heterojunction bipolar transistors

Cao XA; Dang GT; Zhang AP; Ren F; Van Hove JM; Klaassen JJ; Polley CJ; Wowchak AM; Chow PP; King DJ; Abernathy CR; Pearton SJ

Electrochemical and Solid State Letters, Vol.3, No.3, 144-146, 2000

Cao XA, Dang GT, Zhang AP, Ren F, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Abernathy CR, Pearton SJ

Current densities up to 2.55 kA cm(-2) at temperatures up to 250 degrees C were obtained in GaN/AlGaN heterojunction bipolar transistors gown by molecular beam epitaxy. At 25 degrees C, the power density was 20.4 kW cm(-2). Room temperature de current gains of 15-20 were obtained. In the common-base mode of operation. I-C was approximately equal to I-E, indicating high emitter injection efficiency.