Zirconium tin titanate (ZTT) thin films were successfully grown by chemical vapor deposition using directly injected solventless liquid mixtures of metallorganic precursors bearing common ligands, ZrL4+SnL4+TiL4, where L represents diethylamide 1, dimethylamide 2, and t-butoxide 3, respectively. Rutherford backscattering analysis of the ZTT films revealed that the film compositions were affected by the deposition temperatures. The films deposited at 300 degrees C from precursor 3 showed a low leakage current of 10(-8) A/cm(2) at 1 V, which was further improved after thermal anneal under N-2 at 400 degrees C for 30 min.