Single-crystal indium phosphide wafer samples have been implanted through a stencil mask with single energy indium ions at 2, 5, and 8 MeV to fluences of 2, 2, and 3 x 10(14) cm(-2), respectively. Specimens were then etched in a concentrated solution of HF: HNO3 at room temperature. Selective etching of the implanted regions resulted in transfer of the mask pattern to the InP substrate. Etch rates were determined from step height profilometry measurements across the patterned surface. A wet chemical etch rate of 1.7 +/- 0.2 mum/min was observed for the ion implanted material, a rate three orders of magnitude higher than the 2 nm/min measured for unimplanted single crystal material.