Atomic layer deposition of uniform thin hafnium oxide films has been demonstrated directly on H-terminated silicon surfaces using anhydrous hafnium nitrate (Hf(NO3)(4)) precursor and H2O vapor. Atomic layer deposition was initiated on hydrogen terminated silicon surfaces and occurred at substrate temperatures as low as 160degreesC. X-ray diffraction analysis indicated that as-deposited films were smooth, uniform, and amorphous, and that film morphology can be altered by a post-deposition anneal. X-ray photoelectron spectroscopy analysis indicated that films are oxygen rich, contain silicate, and that residual NO3 and NO2 from the precursor can be eliminated by a post-deposition anneal. For a similar to57 Angstrom HfO2 film, a dielectric constant of kappacongruent to10.5 and a capacitive equivalent thickness of similar to21 Angstrom were obtained. (C) 2002 The Electrochemical Society.