화학공학소재연구정보센터
Electrochemical and Solid State Letters, Vol.5, No.5, G36-G39, 2002
Improved barrier and adhesion properties in sputtered TaSiN layer for copper interconnects
The barrier effect for copper diffusion and the adhesion properties of copper seed layers were studied for sputtered TaSiN layers. The diffusion depth of copper following 400degreesC annealing is as deep as 25 nm using conventional tantalum nitride (TaN) barrier layers. With the doping of Si in this layer to form TaSiN, the diffusion depth decreases drastically, reaching 5.0 nm for an optimum Si composition of 0.06-0.09 The stress of thin copper seed layers deposited on TaSiN is much lower than that on conventional Ta barrier layers, decreasing rapidly with increasing Si composition. There appears to be no agglomeration in the low stress copper seed layer. The highest adhesion strength is attained in a copper layer deposited on a TaSiN adhesion layer with a Si composition of 0.16. Note that the optimized Si composition is different between two layers, that is, the barrier and adhesion layers. (C) 2002 The Electrochemical Society.
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