Novel electrochemical method for texturing p-type silicon (<100>) was obtained by applying extreme high cathodic potentials combined with illumination. This texturing process is potential dependent and resulted in different textured surfaces. Unlike the custom wet etching techniques, conducted mainly in strong alkaline or in hydrofluoric acid solutions at potential near the open-circuit potential, this novel method is performed at very high negative potentials in alkaline solutions containing potassium hydroxide. Experimental data obtained from negatively polarized p-type <100> silicon at different potentials is described. (C) 2003 The Electrochemical Society.