Ruthenium thin films were deposited on SiO2/Si substrates at 260-500degreesC by metallorganic chemical vapor deposition (MOCVD) using a liquid precursor (2.4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp), DMPD: 2.4-dimethylpentadienyl, EtCp: ethylcyclopentadienyl]. The deposition characteristics and the electrical properties of the deposited films were compared with those using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)(2)] precursor. The Ru films from Ru(DMPD)(EtCp) were deposited more stably than those from Ru(EtCp)(2). Both films consisted of Ru single phase for the entire deposition temperature range. Initial nucleation of Ru films from Ru(DMPD)(EtCp) was smaller in size and denser than that from Ru(EtCp)(2). Morover the deposition process from Ru(DMPD)(EtCp) has a much shorter incubation time than that from Ru(EtCp)(2). (C) 2003 The Electrochemical Society.