The effect of iodine and cobalt on metallorganic chemical vapor deposition (MOCVD) Cu metallization process was studied. Iodine was used as a catalyst, whereas cobalt was used as a seed layer. Iodine and cobalt increased the growth rate of the Cu film and influenced the Cu grain sizes that were related to the resistivity of the Cu film. Iodine and cobalt enhanced the growth rate and nucleation rate of the Cu grains, respectively. Their effects on Cu deposition are shown on a micrograph of high-resolution transmission electron microscopy. (C) 2003 The Electrochemical Society.