A controlled atmosphere polisher (CAP) was manufactured featuring a pressure-resistant chamber that hermetically contains the entire processing unit. The machine allows chamber gases to be changed. A vacuum pump or a compressor is used to maintain chamber pressure at a desired set point. When polishing under an air ambient, polish rates under partial vacuum or under pressurized conditions are significantly higher than those under conventional polishing conditions. Differences in polish rate are also seen depending on the type of gas used during polishing. This polishing method and tool have the potential of efficiently controlling and enhancing silicon polish rates. (C) 2004 The Electrochemical Society.