High dissolution rates (> 5 mum/min) of both n- and p-type silicon (<100>) were obtained by a novel process of wet silicon etching utilizing cathodic bias. This etching process results in very smooth silicon surfaces. Unlike custom wet etching, conducted in strong alkaline or in hydrofluoric acid solutions, this method is performed even in neutral solutions. A possible mechanism for Si negative potential dissolution in alkaline solutions is discussed. (C) 2004 The Electrochemical Society.