The properties of Cu seed layers deposited on Zr-based diffusion barriers, TiZr and TiZrN, are described. Stress and resistivity of the seed and electroplated (EP) films deposited on the barriers show better performance as compared to Cu layers deposited on a TaN barrier. Cu diffusivity in TiZrN is less than TiZr and TaN when annealed at 400degreesC for 10 min. Chemical mechanical planarization (CMP) compatibility using Cu and barrier slurries were also carried out. Adhesion strength of EP Cu deposited on TiZr was higher as compared to EP Cu on TiZrN. The critical pressure for CMP of Zr-based barriers is higher in abrasive-free slurry as compared to abrasive slurry. (C) 2004 The Electrochemical Society.