Recessed oxynitride dots deposited on self-assembled Ge dots are demonstrated using liquid-phase deposition (LPD). By adding ammonia into the solution, the nitrogen atoms can be incorporated into the deposited film. The tensile strain of the Si cap layer directly deposited on Ge dots can enhance the oxynitride nucleation and deposition on Si surface. The tensile strain may also increase the etching rate of the Si cap layer and the recessed dots are formed directly above the Ge dots. The LPD-SiON dots have a higher dot step height as compared to LPD-SiO2 dots. (C) 2004 The Electrochemical Society.