High-quality SrTiO3 thin films were deposited by charged liquid cluster beam (CLCB) method using a strontium carboxylate with a sol-gel processed Ti precursor at substrate temperatures of 400 and 500 degrees C. The film deposited at 400 degrees C was crystallized at 600-700 degrees C to give a granular structure (film I) while the film deposited at 500 degrees C (film II) gave a columnar structure of high crystallinity without postannealing. The grain growth and electric properties, such as dielectric constant, dissipation factor, leakage current density, and breakdown field, of films I and II were compared. (C) 2004 The Electrochemical Society.