We studied the kinetics of Cu deposition in the process of electroless coppering of porous layers of n-InP at temperatures from 3.5 to 25 degrees C. The procedure of electroless coppering, including preliminary surface sensitization and activation in a supersonic field, is described. We show that the deposition in pores slows down and then ceases entirely with time due to the nonuniformity of the deposition rate of copper as a function of pore depth. Uniform Cu deposition was realized at 3.5 degrees C. The obtained results pave the way to the development of technological conditions for uniform filling in pores in porous semiconductors with metals. (C) 2005 The Electrochemical Society.