We have synthesized and investigated a novel precursor, {2-(Me3Si)(2)C(Cu)C5H4N}(2), (1), for chemical vapor deposition (CVD) of Cu thin films using H-2 as a reducing agent. The alkyl compound (1) is thermally stable but sublimable when heated in a vacuum. Cu was selectively deposited on Si(100) substrate with Pd as a seed layer. X-ray photoelectron spectroscopy showed that a pure Cu film was deposited on the Pd seed layer at 250 degrees C, and the film is clean in terms of possible contaminants. Thus the Cu(I) alkyl compound is suitable for CVD. (c) 2005 The Electrochemical Society.